Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors Culn(S1-xSex)2

We report the carrier transport properties of CuIn(S1-xSex)(2) (0 <= x <= 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 10(3) to 10(-1) Ohm cm) for 1% Mg-doped CuIn(S1-xSex)(2) as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 10(15) to 10(18) cm(3) and mobilities of approximately 1-10 cm(2) V-1 s(-1). These results provide insights into the fundamental carrier transport properties of CuIn(S1-xSex)(2) and will be of value in optimizing these materials further for photoelectrochemistry applications.