A physical model on scattering at high-k dielectric/SiO2 interface of SiGe p-MOSFETs

被引：6
作者：
Zhang, X. F. [1 ]
Xu, J. P.
Lai, P. T.
Li, C. X.
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 11期
基金：
中国国家自然科学基金;
关键词：
high-k; dielectric; mobility; MOSFET; scattering; SiGe;
D O I：
10.1109/TED.2007.906957
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/near the high-k. dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high-k, dielectric and interlayer on the hole mobility are discussed.
引用
收藏
页码：3097 / 3102
页数：6
相关论文
共 18 条
  • [1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
    ANDO, T
    FOWLER, AB
    STERN, F
    [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
  • [2] Analytical model of drain current of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex NMOSFETs and PMOSFETs for circuit simulation
    Bindu, B.
    DasGupta, Nandita
    DasGupta, Amitava
    [J]. SOLID-STATE ELECTRONICS, 2006, 50 (03) : 448 - 455
  • [3] Carrier transport in HfO2/metal gate MOSFETs:: Physical insight into critical parameters
    Cassé, M
    Thevenod, L
    Guillaumot, B
    Tosti, L
    Martin, F
    Mitard, J
    Weber, O
    Andrieu, F
    Ernst, T
    Reimbold, G
    Billon, T
    Mouis, M
    Boulanger, F
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) : 759 - 768
  • [4] Scaling MOSFETs to the Limit: A Physicists's Perspective
    Fischetti, M. V.
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) : 73 - 79
  • [5] Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
    Fischetti, MV
    Laux, SE
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1205 - 1231
  • [6] Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)
    Fulton, CC
    Lucovsky, G
    Nemanich, RJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (04) : 580 - 582
  • [7] Huang CC, 2005, 2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers, P23
  • [8] LI J, 1987, J APPL PHYS, V62, P4212, DOI DOI 10.1063/1.339092
  • [9] Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance
    Lujan, GS
    Magnus, W
    Ragnarsson, LÅ
    Kubicek, S
    De Gendt, S
    Heyns, M
    De Meyer, K
    [J]. MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) : 794 - 797
  • [10] On surface roughness-limited mobility in highly doped n-MOSEET's
    Mazzoni, G
    Lacaita, AL
    Perron, LM
    Pirovano, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1423 - 1428
12