Evaluation of turn-on performance of P-i-N rectifiers and IGBT's under zero voltage switching

This paper compares the turn-on performance of two vertical power bipolar devices, viz, P-i-N diode and IGBT, under Zero Voltage Switching (ZVS). Although bath the devices are ''conductivity modulated'' during turn-on, the IGBT carrier dynamics distinctly differ from that of a P-i-N rectifier. It is shown that, for identical drift region parameters, the conductivity modulation in the IGBT is significantly lower compared to that in a P-i-N rectifier mainly because of carrier flow constraints in the IGBT and the inherent bipolar transistor-like carrier distribution in the IGBT, 2-D mixed device and circuit simulations were performed to understand the behavior of the two devices during turn-on under ZVS, The mixed device and circuit simulator was also used to study the effects of variations in the rate of change of current (di/dt) through the device during turn-on, carrier lifetime and temperature on the turn-on behavior of the two bipolar devices under ZVS.