Very low resistance multilayer ohmic contact to n-GaN

被引：411

作者：

Fan, ZF ^{[1
]}

Mohammad, SN ^{[1
]}

Kim, W ^{[1
]}

Aktas, O ^{[1
]}

Botchkarev, AE ^{[1
]}

Morkoc, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new metallization scheme has been developed for obtaining very low Ohmic contact to n-GaN. The metallization technique involves the deposition of a composite metal layer Ti/Al/Ni/Au (150 Angstrom/2200 Angstrom/400 Angstrom/500 Angstrom) on n-GaN preceded by a reactive ion etching (RIE) process which most likely renders the surface highly n type. Of the several attempts and with annealing at 900 degrees C for 30 s, contacts with specific resistivity values of rho(s) = 8.9 X 10(-8) Omega cm(2) or lower for a doping level of 4 X 10(17) cm(-3) were obtained. The physical mechanism underlying the realization of such a low resistivity is elucidated. (C) 1996 American Institute of Physics.

引用

页码：1672 / 1674

页数：3

共 14 条

[1]

AKTAS O, 1995, APPL PHYS LETT, V66, P1083

[2] MICROWAVE PERFORMANCE OF GAN MESFETS [J].