Disorder-Induced Localization in a Strongly Correlated Atomic Hubbard Gas

被引：235

作者：

Kondov, S. S. ^{[1
]}

McGehee, W. R. ^{[1
]}

Xu, W. ^{[1
]}

DeMarco, B. ^{[1
]}

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 2015年 / 114卷 / 08期

基金：

美国国家科学基金会;

关键词：

METAL-INSULATOR-TRANSITION; OPTICAL LATTICE; ELECTRONIC SYSTEMS; ULTRACOLD ATOMS; FERMIONS; STATES;

D O I：

10.1103/PhysRevLett.114.083002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe the emergence of a disorder-induced insulating state in a strongly interacting atomic Fermi gas trapped in an optical lattice. This closed quantum system, free of a thermal reservoir, realizes the disordered Fermi-Hubbard model, which is a minimal model for strongly correlated electronic solids. We observe disorder-induced localization of a metallic state through measurements of mass transport. By varying the lattice potential depth, we detect interaction-driven delocalization of the disordered insulating state. We also measure localization that persists as the temperature of the gas is raised. These behaviors are consistent with many-body localization, which is a novel paradigm for understanding localization in interacting quantum systems at nonzero temperature.

引用

页数：5

共 35 条

[1] Metal-insulator transition in a weakly interacting many-electron system with localized single-particle states [J].