Electron mobility in abrupt-interface and step-graded AlGaN/GaN Heterostructures

被引：7

作者：

Liu, Dongfeng ^{[1
]}

Lin, Donghua ^{[1
]}

Li, Zhizhong ^{[1
]}

Guo, Kangxian ^{[2
]}

机构：

[1] Guangdong Univ Technol, Sch Informat Engn, Guangzhou 510006, Guangdong, Peoples R China

[2] Guangzhou Univ, Coll Phys & Elect Engn, Dept Phys, Guangzhou 510006, Guangdong, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 10期

基金：

美国国家科学基金会;

关键词：

electron mobility; AlGaN/GaN heterostructures; step-graded heterointerface; Monte Carlo simulation;

D O I：

10.1088/1361-6641/aa84d8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the ensemble Monte Carlo method, we present a comparative study of the electron mobility of two-dimensional electron gases (2DEGs) formed in AlGaN/GaN abrupt-interface heterostructures (ABHs) and step-graded heterostructures (SGHs) at room temperature. We find that the electron mobility in SGHs is obviously higher than that in ABHs. The dependence of electron mobilities on the AlGaN barrier thickness is found to have a close relationship with the dislocation scatterings of electrons. On the other hand, our calculated results show that the mobility difference between SGHs and ABHs generally increases with AlGaN barrier thickness, which means that SGHs with a thicker barrier layer play a more prominent role in obtaining high mobility, compared with ABH counterparts.

引用

页数：5

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