Low-voltage Si-Ge avalanche photodiode

被引：0

作者：

Huang, Zhihong ^{[1
]}

Liang, Di ^{[1
]}

Santori, Charles ^{[1
]}

Fiorentino, Marco ^{[1
]}

Li, Cheng ^{[1
]}

Beausoleil, Raymond G. ^{[1
]}

机构：

[1] Hewlett Packard Labs, Syst Labs, Palo Alto, CA 94304 USA

来源：

2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2015年

关键词：

PHOTODETECTOR;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Here we report a Si-Ge avalanche photodiode (API)) with a breakdown voltage of only -9.8V. The highest measured bandwidth is 12GHz at gain of 15 giving a 180GHz gain-bandwidth product at 1550nm wavelength.

引用

页码：41 / 42

页数：2

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