Exciton photoluminescence of hexagonal ZnO

被引：58

作者：

Butkhuzi, TV

Chelidze, TG

Georgobiani, AN

Jashiashvili, DL

Khulordava, TG

Tsekvava, BE

机构：

[1] Tbilisi State Univ, Dept Phys, GE-380086 Tbilisi, Georgia

[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow, Russia

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.58.10692

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence spectra of ZnO layers obtained by radical-beam epitaxy have been studied. Photoluminescence of free B and C excitons has been observed. At a high excitation level a band with lambda(max) = 363.1 nm is observed. It is explained in terms of the proposed photoluminescence polariton mechanism in the B-n = 1 exciton spectral region through biexcitons. [S0163-1829(98)08235-6].

引用

页码：10692 / 10695

页数：4

共 10 条

[1]

[Anonymous], ZH EKSP TEOR FIZ

[2]

DEMIDENKO AA, 1979, SOV PHYS JETP, V76, P1455

[3] THEORY OF THE CONTRIBUTION OF EXCITONS TO THE COMPLEX DIELECTIC CONSTANT OF CRYSTALS [J].