Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique

被引：2

作者：

Rasool, S. ^{[1
]}

Scajev, P. ^{[3
]}

Saritha, K. ^{[1
]}

Svito, I. ^{[2
]}

Reddy, K. T. Ramakrishna ^{[1
]}

Tivanov, M. S. ^{[2
]}

Grivickas, V. ^{[3
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Solar Photovolta Lab, Tirupati 517502, Andhra Pradesh, India

[2] Belarusian State Univ, Fac Phys, Nezavisimosti 4 Av, Minsk 220030, BELARUS

[3] Vilnius Univ, Inst Photon & Nanotechnol, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 04期

关键词：

In2S3; films; LITG; Carrier lifetime; Bimolecular coefficient; Auger coefficient; TRANSPORT; CONDUCTIVITY; DIFFUSION;

D O I：

10.1007/s00339-020-03495-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In2S3 thin films were deposited onto soda lime glass substrates using thermal evaporation technique at a constant substrate temperature of 300 degrees C and the films were annealed in a sulfur ambient at 250 degrees C and 300 degrees C for 1 h. Light induced transient grating (LITG) technique was used to determine the carrier lifetime in In2S3 thin films. The determined carrier lifetime values for different excitation energy densities, I-0 = 0.06-1.64 mJ/cm(2) decreased from 206 to 18 ps and 150 to 14 ps for the films annealed at 250 degrees C and 300 degrees C respectively. Further, the bimolecular, Auger recombination coefficients and diffusion coefficient were determined in the films. The observed bimolecular carrier recombination origin was explained by interface and Auger recombination processes.

引用

页数：6

共 35 条

[1] MEASUREMENT OF MINORITY-CARRIER LIFETIME BY TIME-RESOLVED PHOTOLUMINESCENCE [J].

AHRENKIEL, RK .

SOLID-STATE ELECTRONICS, 1992, 35 (03) :239-250

[2] Direct Measurements of Carrier Transport in Polycrystalline Methylammonium Lead Iodide Perovskite Films with Transient Grating Spectroscopy [J].

Arias, Dylan H. ;

Moore, David T. ;

van de Lagemaat, Jao ;

Johnson, Justin C. .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (19) :5710-5717

[3] Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy [J].

Baxter, Jason B. ;

Schmuttenmaer, Charles A. .

JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (50) :25229-25239

[4] Bismuth oxysulfide film electrodes with giant incident photon-to-current conversion efficiency: the dynamics of properties with deposition time [J].

Bondarenko, Evgeny A. ;

Streltsov, Eugene A. ;

Mazanik, Alexander, V ;

Kulak, Anatoly, I ;

Grivickas, Vytautas ;

Scajev, Patrik ;

Skorb, Ekaterina, V .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (31) :20340-20346

[5] Time resolved microwave conductivity measurements for the characterization of transport properties in thin film micro-crystalline silicon [J].

Brenot, R ;

Vanderhaghen, R ;

Drevillon, B ;

French, I ;

Cabarrocas, PRI .

THIN SOLID FILMS, 1997, 296 (1-2) :94-97

[6] Introduction to Time-Resolved Spectroscopy: Nanosecond Transient Absorption and Time-Resolved Fluorescence of Eosin B [J].

Farr, Erik P. ;

Quintana, Jason C. ;

Reynoso, Vanessa ;

Ruberry, Josiah D. ;

Shin, Wook R. ;

Swartz, Kevin R. .

JOURNAL OF CHEMICAL EDUCATION, 2018, 95 (05) :864-871

[7] REACTIVELY EVAPORATED-FILMS OF INDIUM SULFIDE [J].

GEORGE, J ;

JOSEPH, KS ;

PRADEEP, B ;

PALSON, TI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (01) :123-131

[8] Solar cell efficiency tables (version 48) [J].

Green, Martin A. ;

Emery, Keith ;

Hishikawa, Yoshihiro ;

Warta, Wilhelm ;

Dunlop, Ewan D. .

PROGRESS IN PHOTOVOLTAICS, 2016, 24 (07) :905-913

[9]

Grivickas V., 2012, Characterization of Materials, P658

[10]

Grundmann M., 2016, PHYS SEMICONDUCTORS

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