A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

被引：0

作者：

Jordan, Jennifer L. ^{[1
]}

Ponchak, George E. ^{[1
]}

Spry, David J. ^{[1
]}

Neudeck, Philip G. ^{[1
]}

机构：

[1] NASA, Glenn Res Ctr, 21000 Brookpark Rd,MS 77-1, Cleveland, OH 44135 USA

来源：

2018 IEEE TOPICAL CONFERENCE ON WIRELESS SENSORS AND SENSOR NETWORKS (WISNET) | 2018年

关键词：

High Temperature; Inductive Power Transfer; SiC Diode;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 degrees C) to 500 degrees C.

引用

页码：23 / 26

页数：4

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