de Haas-van Alphen effect in CeIn3 under pressure

被引：4
|
作者：
Settai, R [1 ]
Kubo, T
Shishido, H
Kobayashi, TC
Onuki, Y
机构：
[1] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
[2] Okayama Univ, Fac Sci, Okayama 7008530, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2005年 / 359卷
关键词：
CeIn3; dHvA effect; pressure effect; quantum phase transition;
D O I：
10.1016/j.physb.2005.01.119
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have investigated a change of the electronic state in CeIn3 via de Haas-van Alphen (dHvA) experiments under pressure up to 2.72 GPa for the magnetic field along [1 1 0]. A main Fermi surface with the dHvA frequency F = 9.4 x 10(7) Oe and a large cyclotron mass m(c)(*) = 53m(0) was observed at 2.72 GPa in the vicinity of the critical pressure where the Neel temperature is suppressed to zero. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：317 / 319
页数：3
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