A research about the temperature compensation of hall sensor

被引：0

作者：

Wang Feng ^{[1
]}

Mi Dong ^{[1
]}

Xu Zhangsui ^{[1
]}

机构：

[1] Mech Engn Coll, Dept Elect Engn, Shijiazhuang 050003, Peoples R China

来源：

ICEMI 2007: PROCEEDINGS OF 2007 8TH INTERNATIONAL CONFERENCE ON ELECTRONIC MEASUREMENT & INSTRUMENTS, VOL IV | 2007年

关键词：

hall sensor; magnetic field; temperature compensation;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Hall sensor is made based on Hall effect. Because of electric field, semiconductor interior conducts. When exterior magnetic field exists, Lorentz force compels originally directional moved electron excursing and electron accumulates on one side of semiconductor. An electromotive force which is called hall electromotive force comes into being. According to the theory, measuring magnetic can be realized. But the conductance and excursion trait of semiconductor are affected easily by the temperature. The inner resistance and the output of hall sensor will change along with the change of the temperature. The article studies the temperature character of hall sensor. At the same time, design and use temperature compensation circuit to reduce the temperature influence, which can make the output more precise.

引用

页码：131 / 134

页数：4