Nanophotonic-Enhanced Two-Photon-Excited Photoluminescence of Perovskite Quantum Dots

被引:29
作者
Becker, Christiane [1 ]
Burger, Sven [2 ]
Barth, Carlo [1 ,2 ]
Manley, Phillip [1 ,2 ]
Jaeger, Klaus [1 ,2 ]
Eisenhauer, David [1 ]
Koeppel, Grit [1 ]
Chabera, Pavel [3 ]
Chen, Junsheng [3 ]
Zheng, Kaibo [3 ]
Pullerits, Tonu [3 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 16, D-12489 Berlin, Germany
[2] Zuse Inst Berlin, Takustr 7, D-14195 Berlin, Germany
[3] Lund Univ, Dept Chem Phys & NanoLund, POB 124, S-22100 Lund, Sweden
来源
ACS PHOTONICS | 2018年 / 5卷 / 11期
基金
瑞典研究理事会;
关键词
all-inorganic cesium lead halide perovskites; quantum dot; photoluminescence; two-photon absorption; nanophotonics; metasurface; UP-CONVERSION LUMINESCENCE; EMISSION; NANOSTRUCTURES; NANOCRYSTALS; ABSORPTION; EXTRACTION; GROWTH; SIZE;
D O I
10.1021/acsphotonics.8b01199
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
All-inorganic CsPbBr3 perovskite colloidal quantum dots have recently emerged as a promising material for a variety of optoelectronic applications, among others for multiphoton-pumped lasing. Nevertheless, high irradiance levels are generally required for such multiphoton processes. One strategy to enhance the multiphoton absorption is taking advantage of high local light intensities using photonic nanostructures. Here, we investigate two-photon excited photoluminescence of CsPbBr3 perovskite quantum dots on a silicon photonic crystal slab. By systematic excitation of optical resonances using a pulsed near-infrared laser beam, we observe an enhancement of two-photon-pumped photoluminescence by more than 1 order of magnitude when comparing to using a bulk silicon film. Experimental and numerical analyses allow relating these findings to near-field enhancement effects on the nanostructured silicon surface. The results reveal a promising approach for significantly decreasing the required irradiance levels for multiphoton processes being of advantage in applications such as biomedical imaging, lighting, and solar energy.
引用
收藏
页码:4668 / 4676
页数:17
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