Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3

被引:79
作者
Walsh, Lee A. [1 ,2 ]
Smyth, Christopher M. [1 ]
Barton, Adam T. [1 ]
Wang, Qingxiao [1 ]
Che, Zifan [1 ]
Yue, Ruoyu [1 ]
Kim, Jiyoung [1 ]
Kim, Moon J. [1 ]
Wallace, Robert M. [1 ]
Hinkle, Christopher L. [1 ]
机构
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
基金
美国国家科学基金会; 爱尔兰科学基金会;
关键词
THIN-FILMS; SURFACE-STATES; IN-SITU; GROWTH;
D O I
10.1021/acs.jpcc.7b08480
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interface between the topological insulator (TI) Bi2Se3 and deposited metal films is investigated using X-ray photoelectron spectroscopy including conventional contact metals (Au, Pd, Cr, and Ir) and magnetic materials (Co, Fe, Ni, Co0.8Fe0.2, and Ni0.8Fe0.2). Au is the only metal to show little or no interaction with the Bi2Se3, with no interfacial layer between the metal and the surface of the TI. The other metals show a range of reaction behaviors with the relative strength of reaction (obtained from the amount of Bi2Se3 consumed during reaction) ordered as Au < Pd < Ir < Co <= CoFe < Ni < Cr < NiFe < Fe, in approximate agreement with the behavior expected from the Gibbs free energies of formation for the alloys formed. Post metallization anneals at 300 degrees C in vacuum were also performed for each interface. Several of the metal films were not stable upon anneal and desorbed from the surface (Au, Pd, Ni, and Ni0.8Fe0.2), while Cr, Fe, Co, and Co0.8Fe0.2 showed accelerated reactions with the underlying Bi2Se3, including interdiffusion between the metal and Se. Ir was the only metal to remain stable following anneal, showing no significant increase in reaction with the Bi2Se3. This study reveals the nature of the metal Bi2Se3 interface for a range of metals. The reactions observed must be considered when designing Bi2Se3-based devices.
引用
收藏
页码:23551 / 23563
页数:13
相关论文
共 63 条
[31]   Interfacial reactions at Fe/topological insulator spin contacts [J].
Majumder, Sarmita ;
Jarvis, Karalee ;
Banerjee, Sanjay K. ;
Kavanagh, Karen L. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (04)
[32]   Spin-transfer torque generated by a topological insulator [J].
Mellnik, A. R. ;
Lee, J. S. ;
Richardella, A. ;
Grab, J. L. ;
Mintun, P. J. ;
Fischer, M. H. ;
Vaezi, A. ;
Manchon, A. ;
Kim, E. -A. ;
Samarth, N. ;
Ralph, D. C. .
NATURE, 2014, 511 (7510) :449-+
[33]   WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J].
MICHAELSON, HB .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4729-4733
[34]   Ferromagnetic contact between Ni and MoX2 (X = S, Se, or Te) with Fermi-level pinning [J].
Min, Kyung-Ah ;
Cha, Janghwan ;
Cho, Kyeongjae ;
Hong, Suklyun .
2D MATERIALS, 2017, 4 (02)
[35]   Patterning Superconductivity in a Topological Insulator [J].
Mlack, Jerome T. ;
Rahman, Atikur ;
Danda, Gopinath ;
Drichko, Natalia ;
Friedensen, Sarah ;
Drndic, Marija ;
Markovic, Nina .
ACS NANO, 2017, 11 (06) :5873-5878
[36]   Characterization of silver selenide thin films grown on Cr-covered Si substrates [J].
Mohanty, Bhaskair Chandra ;
Malar, P. ;
Osipowicz, Thomas ;
Murty, B. S. ;
Varma, Shikha ;
Kasiviswanathan, S. .
SURFACE AND INTERFACE ANALYSIS, 2009, 41 (03) :170-178
[37]  
Moore J, 2009, NAT PHYS, V5, P378, DOI 10.1038/nphys1294
[38]   The birth of topological insulators [J].
Moore, Joel E. .
NATURE, 2010, 464 (7286) :194-198
[39]  
Moulder J.F., 1979, HDB XRAY PHOTOELECTR
[40]   An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS [J].
Oxland, R. ;
Chang, S. W. ;
Li, Xu ;
Wang, S. W. ;
Radhakrishnan, G. ;
Priyantha, W. ;
van Dal, M. J. H. ;
Hsieh, C. H. ;
Vellianitis, G. ;
Doornbos, G. ;
Bhuwalka, K. ;
Duriez, B. ;
Thayne, I. ;
Droopad, R. ;
Passlack, M. ;
Diaz, C. H. ;
Sun, Y. C. .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) :501-503