Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model

被引：4
作者：
Liang, QQ [1 ]
Andrews, JM
Cressler, JD
Niu, GF
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Auburn Univ, Dept Comp Engn, Auburn, AL 36830 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 05期
基金：
美国国家科学基金会;
关键词：
behavioral model; harmonic load pull; linearity optimization; nonlinear source; Volterra series;
D O I：
10.1109/TMTT.2005.847101
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A frequency-domain lumped-nonlinear-source behavioral model is presented. This generalized two-port nonlinear model is used to characterize the linearity of either RF devices or circuits. Similar to two-port ac behavioral models (i.e., using S-, Y-, Z-, or H-parameters), this nonlinear model supports combinations such as shunt, series, and cascade, and thus is suitable for systematic analysis. This model is then applied to analyze the impact of harmonic impedance on the second-order intermodulation and third-order intermodulation of a state-ofthe-art SiGe HBTs and circuits. Simple and general linearity expressions are then derived. Harmonic load-pull simulations and measurements are used to demonstrate the usefulness of the proposed analysis technique.
引用
收藏
页码：1745 / 1755
页数：11
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