Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire

被引：14

作者：

Bartasyte, A. ^{[1
,2
]}

Plausinaitiene, V. ^{[3
]}

Abrutis, A. ^{[3
]}

Stanionyte, S. ^{[3
]}

Margueron, S. ^{[4
,5
]}

Kubilius, V. ^{[3
]}

Boulet, P. ^{[2
]}

Huband, S. ^{[6
]}

Thomas, P. A. ^{[6
]}

机构：

[1] Univ Franche Comte, CNRS, Inst FEMTO ST, UMR 6174, F-25030 Besancon, France

[2] Lorraine Univ, CNRS, Inst Jean Lamour, UMR 7198, F-54042 Nancy, France

[3] Vilnius State Univ, Dept Gen & Inorgan Chem, Vilnius, Lithuania

[4] Lorraine Univ, Lab Mat Opt Photon & Syst, EA 4423, Metz, France

[5] Supelec, Metz, France

[6] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2015年 / 149卷

关键词：

Thin films; Chemical vapour deposition (CVD); Raman spectroscopy and scattering; Thermal expansion; Domain structure; Deformation; PULSED-LASER DEPOSITION; NIOBATE SINGLE-CRYSTALS; WAVE-GUIDES; LITHIUM; CRACKING; GROWTH; MOCVD;

D O I：

10.1016/j.matchemphys.2014.11.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

LiNbO3 films of high epitaxial quality and with thicknesses of 120-500 nm were deposited at 650 degrees C on C-sapphire by atmospheric pressure metal-organic chemical vapour deposition. Li nonstoichiometry, residual stresses, twinning, and thermal expansion of the films as a function of the film thickness were investigated by means of Raman spectroscopy and X-ray diffraction. The relaxation of residual stresses, Li2O loss, inelastic deformation and elastic hysteresis during cycles of heating up to 860 degrees C and cooling down to room temperature were studied, as well. The residual stresses and thermal expansion of films were highly thickness dependent. It was shown that the {01 (1) over bar2} twinning contributed to the stress relaxation in the thick LiNbO3 films. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：622 / 631

页数：10

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