Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire

被引:14
作者
Bartasyte, A. [1 ,2 ]
Plausinaitiene, V. [3 ]
Abrutis, A. [3 ]
Stanionyte, S. [3 ]
Margueron, S. [4 ,5 ]
Kubilius, V. [3 ]
Boulet, P. [2 ]
Huband, S. [6 ]
Thomas, P. A. [6 ]
机构
[1] Univ Franche Comte, CNRS, Inst FEMTO ST, UMR 6174, F-25030 Besancon, France
[2] Lorraine Univ, CNRS, Inst Jean Lamour, UMR 7198, F-54042 Nancy, France
[3] Vilnius State Univ, Dept Gen & Inorgan Chem, Vilnius, Lithuania
[4] Lorraine Univ, Lab Mat Opt Photon & Syst, EA 4423, Metz, France
[5] Supelec, Metz, France
[6] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
关键词
Thin films; Chemical vapour deposition (CVD); Raman spectroscopy and scattering; Thermal expansion; Domain structure; Deformation; PULSED-LASER DEPOSITION; NIOBATE SINGLE-CRYSTALS; WAVE-GUIDES; LITHIUM; CRACKING; GROWTH; MOCVD;
D O I
10.1016/j.matchemphys.2014.11.018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
LiNbO3 films of high epitaxial quality and with thicknesses of 120-500 nm were deposited at 650 degrees C on C-sapphire by atmospheric pressure metal-organic chemical vapour deposition. Li nonstoichiometry, residual stresses, twinning, and thermal expansion of the films as a function of the film thickness were investigated by means of Raman spectroscopy and X-ray diffraction. The relaxation of residual stresses, Li2O loss, inelastic deformation and elastic hysteresis during cycles of heating up to 860 degrees C and cooling down to room temperature were studied, as well. The residual stresses and thermal expansion of films were highly thickness dependent. It was shown that the {01 (1) over bar2} twinning contributed to the stress relaxation in the thick LiNbO3 films. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:622 / 631
页数:10
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