Sputtering and Chemical Modification of Solid Surfaces Using Oxygen Ion Beams

被引：0
作者：
Takaoka, Gikan H. [1 ]
Ryuto, Hiromichi [1 ]
Takeuchi, Mitsuaki [1 ]
Tsujinaka, Ryou [1 ]
机构：
[1] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Nishikyo Ku, Kyoto 6158510, Japan
来源：
2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) | 2014年
关键词：
Oxygen cluster; Ion beam; Implantation; Sputtering; Surface modification; Oxide formation; Wettability; CELL-ATTACHMENT; CLUSTER; POLYSTYRENE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Oxygen cluster ion beams and/or monomer ion beams were used to investigate the sputtering and oxidation of solid surfaces such as silicon (Si) and poly-lactic acid (PLA) surfaces. For the oxygen cluster ion irradiation, the sputtered depth increased with increase of the acceleration voltage, and the sputtering yield was much larger than the value for oxygen monomer ion irradiation. Furthermore, for the oxidation process of Si and PLA surfaces, the simultaneous use of oxygen ion beams was more effective than either the cluster ion irradiation or the monomer ion irradiation.
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页数：4
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