SYNTHESIS OF ZnO:N THIN FILMS BY REACTIVE DC MAGNETRON SPUTTERING

被引：1

作者：

Burinskas, S. ^{[1
]}

Dudonis, J. ^{[1
]}

Milcius, D. ^{[1
,2
]}

Karaliunas, M. ^{[3
,4
]}

Kuokstis, E. ^{[3
,4
]}

机构：

[1] Kaunas Univ Technol, Dept Phys, LT-51368 Kaunas, Lithuania

[2] Lithuania Energy Inst, Ctr Hydrogen Energy Technol, LT-44403 Kaunas, Lithuania

[3] Vilnius State Univ, Semicond Phys Dept, LT-10222 Vilnius, Lithuania

[4] Vilnius State Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2010年 / 50卷 / 03期

关键词：

reactive magnetron sputtering; nitrogen doped zinc oxide; p-type ZnO thin films; LED; P-TYPE ZNO; OPTICAL-PROPERTIES; MICROSTRUCTURE; ACCEPTOR; DEVICES;

D O I：

10.3952/lithjphys.50303

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Structural, electrical, and optical properties of nitrogen doped zinc oxide (ZnO:N) thin films deposited by direct current magnetron sputtering are analysed in this work. Nitrogen doping allows creation of p-type semiconducting ZnO thin films for their most important application as light emitting diodes. The scanning electron microscope images of sample cross-section show dense structure with columnar growth features. The X-ray diffraction patterns indicate semi-amorphous structure, explaining very low photoluminescence intensity. Optical transmittance measurements reveal significant changes in optical properties upon different amount of nitrogen doping. The resistance measurements in 30-90 degrees C temperature range of ZnO:N thin films demonstrate similar to semiconductor behaviour and show resistance change up to 50%.

引用

页码：325 / 333

页数：9

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