Si-CMOS-compatible lift-off fabrication of low-loss planar chalcogenide waveguides

被引:93
|
作者
Hu, Juejun
Tarasov, Vladimir
Carlie, Nathan
Feng, Ning-Ning
Petit, Laeticia
Agarwal, Anu
Richardson, Kathleen
Kimerling, Lionel
机构
[1] MIT, Microphoton Ctr, Cambridge, MA 02139 USA
[2] Clemson Univ, Adv Mat Res Lab, Anderson, SC 29625 USA
来源
OPTICS EXPRESS | 2007年 / 15卷 / 19期
关键词
D O I
10.1364/OE.15.011798
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate, for the first time to the best of our knowledge, low-loss, Si-CMOS-compatible fabrication of single-mode chalcogenide strip waveguides. As a novel route of chalcogenide glass film patterning, lift-off allows several benefits: leverage with Si-CMOS process compatibility; ability to fabricate single-mode waveguides with core sizes down to submicron range; and reduced sidewall roughness. High-indexcontrast Ge23Sb7S70 strip waveguides have been fabricated using lift-off with excellent uniformity of loss propagation and the lowest loss figure of reported to date. We also show that small core Ge23Sb7S70 rib waveguides can be fabricated via lift-off as well, with loss figures lower than 0.5 dB/cm. Additionally, we find through waveguide modal analysis that although overall transmission loss is low, the predominant source of this loss comes from scattering at the sidewalls. (C) 2007 Optical Society of America.
引用
收藏
页码:11798 / 11807
页数:10
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