Transmission electron microscopy study of Si nanowires

被引：80
|
作者：
Zhou, GW
Zhang, Z
Bai, ZG
Feng, SQ
Yu, DP [1 ]
机构：
[1] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
[2] Beijing Univ, Dept Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 05期
关键词：
D O I：
10.1063/1.121945
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Microstructures of Si nanowires (SiNW's) synthesized using laser ablation were investigated by transmission electron microscopy. The SiNW's have a high density of structural defects, which may play an important role in the formation of SiNW's and in the determination of the morphology of the nanowires. A model for the growth mechanism of the SiNW's was discussed on the basis of the observation. (C) 1998 American Institute of Physics. [S0003-6951(98)00527-0].
引用
收藏
页码：677 / 679
页数：3
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