An investigation on silar Cu(In1-xAlx)Se2 thin films

被引：27
作者：
Dhanam, M. [1 ]
Kavitha, B. [1 ]
Velumani, S. [2 ]
机构：
[1] Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
[2] IPN, CINVESTAV, Mexico City, DF, Mexico
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 174卷 / 1-3期
关键词：
CBD; SILAR; XRD; SEM; EDAX; IONIC-LAYER ADSORPTION; SOLAR-CELLS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; TEMPERATURE; DEPOSITION; CUINSE2; GROWTH; DEVICE;
D O I：
10.1016/j.mseb.2010.03.028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cu(In1-xAlx)Se-2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：209 / 215
页数：7
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