Luminescent properties of Eu3+ doped α-Gd2(MoO4)3 phosphor for white light emitting diodes

被引：66

作者：

Zhao, Xiaoxia

Wang, Xiaojun ^{[1
]}

Chen, Baojiu

Meng, Qingyu

Yan, Bin

Di, Weihua

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130023, Peoples R China

[2] Dalian Maritime Univ, Dept Phys, Dalian 116026, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

OPTICAL MATERIALS | 2007年 / 29卷 / 12期

基金：

中国国家自然科学基金;

关键词：

red emitting phosphor; Eu3+; white LED; flux;

D O I：

10.1016/j.optmat.2006.09.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel red emitting phosphor alpha-Gd-2(MoO4)(3):Eu3+ was developed for white light emitting diodes (LEDs). The phosphor was prepared by solid-state reaction. The effects of the flux content and the activator concentration on the crystal structure, morphology and luminescent properties were investigated by using XRD, SEM, and fluorescent spectra. These results showed that this phosphor can be effectively excited by ultraviolet (UV) (395 nm) and blue (465 nm) light, matching the output wavelengths of ultraviolet or blue LED chips. The alpha-Gd-2 (MoO4)(3) phosphor may be a better candidate for solid state lighting application. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1680 / 1684

页数：5

共 20 条

[11] PHASE-EQUILIBRIUM DIAGRAM FOR SYSTEM GD2O3-MOO3 [J].

MEGUMI, K ;

YUMOTO, H ;

ASHIDA, S ;

AKIYAMA, S ;

FURUHATA, Y .

MATERIALS RESEARCH BULLETIN, 1974, 9 (04) :391-400

[12] High-power UV InCaN/AlGaN double-heterostructure LEDs [J].

Mukai, T ;

Morita, D ;

Nakamura, S .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :778-781

[13] Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes [J].

Mukai, T ;

Yamada, M ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (11B) :L1358-L1361

[14] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

[15] Novel red phosphors for solid state lighting; the system BixLn1-xVO4; Eu3+/Sm3+ (Ln = Y, Gd) [J].

Neeraj, S ;

Kijima, N ;

Cheetham, AK .

SOLID STATE COMMUNICATIONS, 2004, 131 (01) :65-69

[16] Novel red phosphors for solid-state lighting:: the system NaM(WO4)2-x(MoO4)x:Eu3+ (M=Gd, Y, Bi) [J].

Neeraj, S ;

Kijima, N ;

Cheetham, AK .

CHEMICAL PHYSICS LETTERS, 2004, 387 (1-3) :2-6

[17] Intense red-emitting phosphors for white light emitting diodes [J].

Sivakumar, V ;

Varadaraju, UV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (10) :H168-H171

[18] Ca1-2xEuxLixMoO4:: A novel red phosphor for solid-state lighting based on a GaN LED [J].

Wang, JG ;

Jing, XP ;

Yan, CH ;

Lin, LH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (03) :G186-G188

[19] Calculation of nonlinear optical coefficients of orthorhombic Re2(MoO4)3 crystals [J].

Xue, DF ;

Zhang, SY .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1998, 59 (08) :1337-1341

[20] Crystal growth of β′-Gd2(MoO4)3 and in situ observation of its domain structure by the microscope and the synchrotron X-ray topography [J].

Yuan, QX ;

Zhao, CH ;

Luo, WP ;

Yin, XF ;

Xu, J ;

Pan, SK .

JOURNAL OF CRYSTAL GROWTH, 2001, 233 (04) :717-722

← 1 2 →