Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors

被引：14

作者：

Palestri, P ^{[1
]}

Selmi, L ^{[1
]}

Pavesi, M ^{[1
]}

Widdershoven, F ^{[1
]}

Sangiorgi, E ^{[1
]}

机构：

[1] DIEGM, I-33100 Udine, Italy

来源：

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年

关键词：

D O I：

10.1109/SISPAD.2000.871201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a Monte Carte (MC) model comprising SiO2 and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nn oxides for Non Volatile Memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.

引用

页码：38 / 41

页数：4

共 16 条

[1]

ALAM MA, 1999, IEDM

[2] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT AND IMPACT IONIZATION IN SILICON DIOXIDE [J].