Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

被引：18

作者：

Hjelmgren, Hans ^{[1
]}

Andersson, Kristoffer ^{[1
]}

Eriksson, Joakim ^{[1
]}

Nilsson, Per-Ake ^{[1
]}

Sudow, Mattias ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 08期

关键词：

silicon carbide; field effect transistor; simulation; microwave;

D O I：

10.1016/j.sse.2007.06.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DC and small-signal electro-thermal simulations of a 4H-SiC microwave power MESFET on a high purity semi-insulating substrate are compared to measurements. The focus is on the electron transport, substrate traps, and thermal heating. The doping concentrations are described by measured SIMS profiles, and the material parameters are in accordance with published results. Although the simulated MESFET has a p-buffer and a high purity substrate, the simulations show that the density of shallow traps affects the device characteristics. The very good agreement between simulated and measured DC and small-signal characteristics indicates that the models for electron mobility, substrate traps, and heating are the most important to achieve good agreement with measured data. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1144 / 1152

页数：9

共 40 条

[1] Fabrication and characterization of field-plated buried-gate SiC MESFETs [J].

Andersson, Kristoffer ;

Sudow, Mattias ;

Nilsson, Per-Ake ;

Sveinbjornsson, Einar ;

Hjelmgren, Hans ;

Nilsson, Joakim ;

Stahl, Johan ;

Zirath, Herbert ;

Rorsman, Niklas .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (07) :573-575

[2] Hot-electron transport in 4H-SiC [J].

Ardaravicius, L ;

Matulionis, A ;

Kiprijanovic, O ;

Liberis, J ;

Cha, HY ;

Eastman, LF ;

Spencer, MG .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :022107-1

[3]

Bakowski M, 1997, PHYS STATUS SOLIDI A, V162, P421, DOI 10.1002/1521-396X(199707)162:1<421::AID-PSSA421>3.0.CO

[4]

2-B

[5] Calculation of lattice heating in SiC RF power devices [J].

Bertilsson, K ;

Harris, C ;

Nilsson, HE .

SOLID-STATE ELECTRONICS, 2004, 48 (12) :2103-2107

[6]

BERTILSSON K, 2004, THESIS ROYAL I TECHN

[7] Accuracy counts in modeling TCAD's future: Device and process simulation find intelligence on the World Wide Web [J].

2000, Institute of Electrical and Electronics Engineers Inc. (19)

[8] SiC and GaN wide bandgap semiconductor materials and devices [J].

Burk, AA ;

O'Loughlin, MJ ;

Siergiej, RR ;

Agarwal, AK ;

Sriram, S ;

Clarke, RC ;

MacMillan, MF ;

Balakrishna, V ;

Brandt, CD .

SOLID-STATE ELECTRONICS, 1999, 43 (08) :1459-1464

[9] Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs [J].

Cha, HY ;

Thomas, CI ;

Koley, G ;

Eastman, LF ;

Spencer, MG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) :1569-1574

[10]

CHA HY, 2004, INT J HIGH SPEED ELE, V14, P260

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