Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss

被引：39

作者：

Onozawa, Y. ^{[1
]}

Nakano, H. ^{[1
]}

Otsuki, M. ^{[1
]}

Yoshikawa, K. ^{[2
]}

Miyasaka, T. ^{[1
]}

Seki, Y. ^{[3
]}

机构：

[1] Fuji Elect Device Technol Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan

[2] Fuji Elect Adv Technol Co Ltd, Ichihara, Chiba, Japan

[3] Fuji Elect Holdings Co Ltd, Tokyo, Japan

来源：

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年

关键词：

floating P-base layer; EMI noise; turn-on di/dt controllability; turn-off oscillation; FWD reverse recovery dv/dt;

D O I：

10.1109/ISPSD.2007.4294920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the next generation 1200V trench-gate FS-IGBT chip technologies based on the concepts of the "low noise" and "low power dissipation". The novel design of the IGBT surface structure has been able to realize 36% reduction of the turn-on power dissipation when compared to the conventional IGBTs under the operating condition to set the same FWD reverse recovery dv/dt. Furthermore, the trade-off relationship between the on-state voltage and the turn-off power dissipation has been improved about 20% without the turn-off oscillation even in the extreme condition.

引用

页码：13 / +

页数：2

共 6 条

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