Mid-IR intersubband quantum cascade lasers

被引:0
|
作者
Sirtori, C [1 ]
Capasso, F [1 ]
Faist, J [1 ]
Cho, AY [1 ]
Collot, P [1 ]
Berger, V [1 ]
Nagle, J [1 ]
机构
[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France
来源
IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷
关键词
semiconductor lasers; bandgap engineering; resonant tunneling; quantum wells;
D O I
10.1117/12.304446
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Quantum cascade lasers are new light sources in the mid-infrared (3.5 - 12 mu m), based on resonant tunneling and optical transitions between quantised conduction band states. Quantum engineering of electronic energy levels and tailoring of the wavefunctions are used to obtain population inversion and optimize the overall laser performance. Advanced structures fi-om a point of view of the quantum design, such as two wavelength emitters, are presented. New waveguide confinement based on surface plasmon are also discussed. In this configuration it is shown that optical confinement can be achieved without the growth of cladding layers. The paper concludes with a general comparative discussion between GaAs/AlGaAs and GaInAs/AlInAs material systems for the new generations of quantum cascade lasers.
引用
收藏
页码:212 / 223
页数:12
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