Electrically Driven Nonreciprocity Induced by Interband Photonic Transition on a Silicon Chip

被引：650

作者：

Lira, Hugo ^{[3
]}

Yu, Zongfu ^{[2
]}

Fan, Shanhui ^{[2
]}

Lipson, Michal ^{[1
]}

机构：

[1] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 03期

基金：

美国国家科学基金会;

关键词：

OPTICAL ISOLATOR;

D O I：

10.1103/PhysRevLett.109.033901

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate electrically driven nonreciprocity on a silicon chip. By achieving an indirect interband photonic transition, we show that the transmission coefficients between two single-mode waveguides become dependent on the propagation directions only in the presence of the electrical drive. Our structure is characterized by a nonsymmetric scattering matrix identical to a linear magneto-optical device.

引用

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