Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition

被引：8
作者：
Mimila-Arroyo, J
Lusson, A
Chevallier, J
Barbé, M
Theys, B
Jomard, F
Bland, SW
机构：
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Mexico City 07000, DF, Mexico
[2] Inst Politecn Nacl, Esc Sup Ing Mecan & Elect, Mexico City 07000, DF, Mexico
[3] Lab Pys Solides & Cristalogenese, CNRS, UMR, Meudon, France
[4] IQE Europe Ltd, Cardiff CF3 0EG, S Glam, Wales
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 19期
关键词：
D O I：
10.1063/1.1413718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carbon doping efficiency in GaAs grown by metalorganic chemical vapor deposition using intrinsic and extrinsic doping sources is studied. Independent of the carbon source, carbon hydrogen complexes are systematically present and depending on the growth conditions, carbon dimers can be present and form complexes with hydrogen as well. Carbon-hydrogen related complexes and dimers reduce the hole concentration decreasing the doping efficiency. Additionally, the carbon dimer introduces a deep level, decreases the hole mobility and hydrogen bonds stronger to it than to isolated carbon. Depending on the growth conditions it is possible to reach 100% doping efficiency with high hole mobility. (C) 2001 American Institute of Physics.
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页码：3095 / 3097
页数：3
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