All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers

被引:39
作者
Baker, C
Gregory, IS
Evans, MJ
Tribe, R
Linfield, EH
Missous, M
机构
[1] TeraView Ltd, Cambridge CB4 0WS, England
[2] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England
[3] Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England
关键词
D O I
10.1364/OPEX.13.009639
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate, for the first time, an all-optoelectronic continuous-wave terahertz photomixing system that uses low-temperature grown InGaAs devices both for emitters and coherent homodyne detectors. The system is compatible with fiber-optic excitation wavelengths, and we compare the performance to the more common LT-GaAs photomixers. (c) 2005 Optical Society of America.
引用
收藏
页码:9639 / 9644
页数:6
相关论文
共 16 条
[1]   Highly resistive annealed low-temperature-grown InGaAs with sub-500 fs carrier lifetimes [J].
Baker, C ;
Gregory, IS ;
Tribe, WR ;
Bradley, IV ;
Evans, MJ ;
Linfield, EH ;
Missous, M .
APPLIED PHYSICS LETTERS, 2004, 85 (21) :4965-4967
[2]   Terahertz pulsed imaging with 1.06 μm laser excitation [J].
Baker, C ;
Gregory, IS ;
Tribe, WR ;
Bradley, IV ;
Evans, MJ ;
Withers, M ;
Taday, PF ;
Wallace, VP ;
Linfield, EH ;
Davies, AG ;
Missous, M .
APPLIED PHYSICS LETTERS, 2003, 83 (20) :4113-4115
[3]   ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power [J].
Bjarnason, JE ;
Chan, TLJ ;
Lee, AWM ;
Brown, ER ;
Driscoll, DC ;
Hanson, M ;
Gossard, AC ;
Muller, RE .
APPLIED PHYSICS LETTERS, 2004, 85 (18) :3983-3985
[4]   MILLIWATT OUTPUT LEVELS AND SUPERQUADRATIC BIAS DEPENDENCE IN A LOW-TEMPERATURE-GROWN GAAS PHOTOMIXER [J].
BROWN, ER ;
MCINTOSH, KA ;
SMITH, FW ;
NICHOLS, KB ;
MANFRA, MJ ;
DENNIS, CL ;
MATTIA, JP .
APPLIED PHYSICS LETTERS, 1994, 64 (24) :3311-3313
[5]   A photoconductive model for superior GaAs THz photomixers [J].
Brown, ER .
APPLIED PHYSICS LETTERS, 1999, 75 (06) :769-771
[6]   Phase sensitive continuous-wave THz imaging using diode lasers [J].
Gregory, IS ;
Tribe, WR ;
Cole, BE ;
Baker, C ;
Evans, MJ ;
Bradley, IV ;
Linfield, EH ;
Davies, AG ;
Missous, M .
ELECTRONICS LETTERS, 2004, 40 (02) :143-145
[7]   High resistivity annealed low-temperature GaAs with 100 fs lifetimes [J].
Gregory, IS ;
Baker, C ;
Tribe, WR ;
Evans, MJ ;
Beere, HE ;
Linfield, EH ;
Davies, AG ;
Missous, M .
APPLIED PHYSICS LETTERS, 2003, 83 (20) :4199-4201
[8]   ULTRAFAST CARRIER DYNAMICS IN III-V-SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY LOW SUBSTRATE TEMPERATURES [J].
GUPTA, S ;
WHITAKER, JF ;
MOUROU, GA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2464-2472
[9]   Electrical properties of 1.55 μm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime [J].
Mangeney, J ;
Joulaud, L ;
Decobert, J ;
Lourtioz, JM ;
Perrossier, JL ;
Cabaret, S ;
Crozat, P .
ELECTRONICS LETTERS, 2003, 39 (08) :681-682
[10]   Terahertz photomixing with diode lasers in low-temperature-grown GaAs [J].
McIntosh, KA ;
Brown, ER ;
Nichols, KB ;
McMahon, OB ;
DiNatale, WF ;
Lyszczarz, TM .
APPLIED PHYSICS LETTERS, 1995, 67 (26) :3844-3846