Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field

被引：3
作者：
Miller, W. [1 ]
Frank-Rotsch, Ch. [1 ]
Czupalla, M. [1 ]
Rudolph, P. [2 ]
机构：
[1] Leibniz Inst Crystal Growth IKZ, D-12489 Berlin, Germany
[2] Crystal Technol Consulting, D-12529 Schonefeld, Germany
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2012年 / 47卷 / 03期
关键词：
numerical simulation; Czochralski growth; facets; KENNETH A. JACKSON; KIRK M. BEATTY; SI(111) FACET; SIMULATION;
D O I：
10.1002/crat.201100494
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present 3D simulations of melt flow in a Czochralski process of Si single crystal growth with a travelling magnetic field (TMF). The choice of the TMF significantly influences the thermal field in the melt. Using a downwards TMF field the induced convection causes a thermal field with a low radial component of the temperature gradient along the melt surface and a high vertical component below the crystal. Such a thermal field allows the kinetics-based creation of {110} side facets, which was proven in several experimental runs. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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收藏
页码：285 / 292
页数：8
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