Single nanowire green InGaN/GaN light emitting diodes

被引：8

作者：

Zhang, Guogang ^{[1
,2
]}

Li, Ziyuan ^{[1
]}

Yuan, Xiaoming ^{[1
]}

Wang, Fan ^{[1
]}

Fu, Lan ^{[1
]}

Zhuang, Zhe ^{[2
]}

Ren, Fang-Fang ^{[1
,2
]}

Liu, Bin ^{[2
]}

Zhang, Rong ^{[2
]}

Tan, Hark Hoe ^{[1
]}

Jagadish, Chennupati ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 2601, Australia

[2] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Sch Elect Sci & Engn, Nanjing Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 43期

基金：

澳大利亚研究理事会;

关键词：

InGaN/GaN; nanowire; electroluminescence; light-emitting diodes; GAN; EFFICIENCY; EMITTERS; ARRAYS; WELL;

D O I：

10.1088/0957-4484/27/43/435205

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

y Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

引用

页数：7

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