Single nanowire green InGaN/GaN light emitting diodes

被引：8

作者：

Zhang, Guogang ^{[1
,2
]}

Li, Ziyuan ^{[1
]}

Yuan, Xiaoming ^{[1
]}

Wang, Fan ^{[1
]}

Fu, Lan ^{[1
]}

Zhuang, Zhe ^{[2
]}

Ren, Fang-Fang ^{[1
,2
]}

Liu, Bin ^{[2
]}

Zhang, Rong ^{[2
]}

Tan, Hark Hoe ^{[1
]}

Jagadish, Chennupati ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 2601, Australia

[2] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Sch Elect Sci & Engn, Nanjing Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 43期

基金：

澳大利亚研究理事会;

关键词：

InGaN/GaN; nanowire; electroluminescence; light-emitting diodes; GAN; EFFICIENCY; EMITTERS; ARRAYS; WELL;

D O I：

10.1088/0957-4484/27/43/435205

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

y Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

引用

页数：7

共 50 条

[1] Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes
Jahangir, Shafat
Banerjee, Animesh
Bhattacharya, Pallab
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5, 2013, 10 (05): : 812 - 815
[2] InGaN/GaN Nanowire Flexible Light Emitting Diodes and Photodetectors
Guan, Nan
Dai, Xing
Zhang, Hezhi
Mancini, Lorenzo
Kapoor, Akanksha
Bougerol, Catherine
Julien, Francois H.
Cavassilas, Nicolas
Foldyna, Martin
Durand, Christophe
Eymery, Joel
Tchernycheva, Maria
2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), 2017,
[3] Reliability study on green InGaN/GaN light emitting diodes
Li, Z. L.
Lai, P. T.
Choi, H. W.
16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
[4] Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
Vladimir Neplokh
Agnes Messanvi
Hezhi Zhang
Francois H. Julien
Andrey Babichev
Joel Eymery
Christophe Durand
Maria Tchernycheva
Nanoscale Research Letters, 2015, 10
[5] Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
Neplokh, Vladimir
Messanvi, Agnes
Zhang, Hezhi
Julien, Francois H.
Babichev, Andrey
Eymery, Joel
Durand, Christophe
Tchernycheva, Maria
NANOSCALE RESEARCH LETTERS, 2015, 10 : 1 - 6
[6] InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
Guo, Wei
Banerjee, Animesh
Bhattacharya, Pallab
Ooi, Boon S.
APPLIED PHYSICS LETTERS, 2011, 98 (19)
[7] Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes
Zhang, Shaofei
Laleyan, David Arto
Wang, Qi
Mi, Zetian
JOURNAL OF ENGINEERING-JOE, 2015, : 1 - 3
[8] A Reliability Study on Green InGaN-GaN Light-Emitting Diodes
Li, Z. L.
Lai, P. T.
Choi, H. W.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (19) : 1429 - 1431
[9] Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes
Osinski, M
Perlin, P
Schone, H
Paxton, AH
Taylor, EW
ELECTRONICS LETTERS, 1997, 33 (14) : 1252 - 1254
[10] Optical and electrical properties of interdigitated InGaN/GaN green light emitting diodes
Lee, J
Eliseev, PG
Osinski, M
Lee, DS
Ramer, JC
Florescu, DI
Armour, EA
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XII, 2004, 5349 : 408 - 415

← 1 2 3 4 5 →