Study of the growth of boron nanowires synthesized by laser ablation

被引：21
|
作者：
Zhang, YJ
Ago, H
Yumura, M
Ohshima, S
Uchida, K
Komatsu, T
Iijima, S
机构：
[1] AIST, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan
[2] NEC Corp Ltd, Tsukuba, Ibaraki 3058501, Japan
[3] Meijo Univ, Fac Sci & Technol, Terpaku Ku, Nagoya, Aichi 4688502, Japan
来源：
CHEMICAL PHYSICS LETTERS | 2004年 / 385卷 / 3-4期
关键词：
D O I：
10.1016/j.cplett.2003.12.052
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Boron nanowires with different morphologies and diameters have been fabricated by laser ablation. The effects of the synthesis temperatures, intensities of the laser beams, the types of the metal catalysts and the addition of H3BO3 on the growth of the boron nanowires are studied. The systematic analyses show that the vapor-liquid-solid (VLS) model may play important roles in the growth of the boron nanowires. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：177 / 183
页数：7
相关论文
共 50 条
  • [1] Boron nanowires synthesized by laser ablation at high temperature
    Meng, XM
    Hu, JQ
    Jiang, Y
    Lee, CS
    Lee, ST
    CHEMICAL PHYSICS LETTERS, 2003, 370 (5-6) : 825 - 828
  • [2] Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation
    Fukata, N.
    Mitome, M.
    Bando, Y.
    Seoka, M.
    Matsushita, S.
    Murakami, K.
    Chen, J.
    Sekiguchi, T.
    APPLIED PHYSICS LETTERS, 2008, 93 (20)
  • [3] Growth of crystalline boron nanowires by pulsed laser ablation
    Yoon, Jong-Won
    Shim, Kwang Bo
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2011, 12 (02): : 199 - 201
  • [4] Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation
    Fukata, N.
    Chen, J.
    Sekiguchi, T.
    Okada, N.
    Murakami, K.
    Tsurui, T.
    Ito, S.
    APPLIED PHYSICS LETTERS, 2006, 89 (20)
  • [5] Synthesis of crystalline boron nanowires by laser ablation
    Zhang, YJ
    Ago, H
    Yumura, M
    Komatsu, T
    Ohshima, S
    Uchida, K
    Iijima, S
    CHEMICAL COMMUNICATIONS, 2002, (23) : 2806 - 2807
  • [6] Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation
    Zhou, GW
    Zhang, Z
    Yu, DP
    JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 129 - 135
  • [7] Phonon confinement in silicon nanowires synthesized by laser ablation
    Fukata, N
    Oshima, T
    Okada, N
    Kizuka, T
    Tsurui, T
    Ito, S
    Murakami, K
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 864 - 867
  • [8] Impurity doping in silicon nanowires synthesized by laser ablation
    Fukata, N.
    Matsushita, S.
    Okada, N.
    Chen, J.
    Sekiguchi, T.
    Uchida, N.
    Murakami, K.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 93 (03): : 589 - 592
  • [9] Impurity doping in silicon nanowires synthesized by laser ablation
    N. Fukata
    S. Matsushita
    N. Okada
    J. Chen
    T. Sekiguchi
    N. Uchida
    K. Murakami
    Applied Physics A, 2008, 93 : 589 - 592
  • [10] Growth of SiOx nanowires by laser ablation
    Aharonovich, Igor
    Tamir, Shoshana
    Lifshitz, Yeshayahu
    NANOTECHNOLOGY, 2008, 19 (06)
12345