Optical up-conversion processes in InAs quantum dots

被引：0

作者：

Paskov, PP ^{[1
]}

Holtz, PO ^{[1
]}

Monemar, B ^{[1
]}

Garcia, JM ^{[1
]}

Schoenfeld, WV ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an experimental study of the photoluminescence up-conversion (UPL) in InAs/GaAs quantum dots. With a resonant excitation of quantum dots an efficient emission from the GaAs barrier is observed. The excitation spectrum and the intensity dependence of the UPL signal suggest that the optical up-conversion is induced by a two-step two-photon absorption process involving quantum dot states.

引用

页码：1229 / 1230

页数：2

共 7 条

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