X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP:: Present status and prospects

被引：10

作者：

Dubecky, F ^{[1
]}

Darmo, J ^{[1
]}

Zat'ko, B ^{[1
]}

Fornari, R ^{[1
]}

Necas, V ^{[1
]}

Krempasky, M ^{[1
]}

Pelfer, PG ^{[1
]}

Sekácová, M ^{[1
]}

Bohácek, P ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the different aspects of X-ray digital radiology are considered and the requirements of the materials for radiation detector applications are identified. The status of development of X- and gamma -ray detectors based on semi-insulating (SI) GaAs and InP is reviewed. Emphasis is put on the (i) basic material characteristics, (ii) role of the electrodes in the overall detector performances. Detectors recently developed at IEE SAS are illustrated along with the first digital images taken with the detectors. Some conclusions about the relationship between material quality and applications are provided.

引用

页码：151 / 158

页数：8

共 27 条

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