Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

被引：128

作者：

Meyaard, David S. ^{[1
]}

Lin, Guan-Bo ^{[1
]}

Shan, Qifeng ^{[2
]}

Cho, Jaehee ^{[1
]}

Schubert, E. Fred ^{[1
,2
]}

Shim, Hyunwook ^{[3
]}

Kim, Min-Ho ^{[3
]}

Sone, Cheolsoo ^{[3
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[3] Samsung LED, R&D Inst, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.3671395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the asymmetry in carrier concentration and mobility is studied in GaInN pn-junction light-emitting diodes (LEDs). We propose and present experimental evidence that the asymmetry in carrier concentration and mobility, and associated high-level injection phenomena, cause efficiency droop in GaInN LEDs. Low temperatures exacerbate the degree of asymmetry of the junction by reducing acceptor ionization, and shift high-injection-phenomena to lower currents. Accordingly, at temperatures near 80 K, we measure a greater droop compared to room temperature. The analysis of temperature-dependent I-V curves shows an excellent correlation between the onset of high-level injection and the onset of droop. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671395]

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