Improvement of material quality of multijunction solar cells by rapid thermal annealing

被引：5

作者：

Yang, Min-De ^{[1
]}

Liu, Yu-Kai ^{[1
]}

Shen, Ji-Lin ^{[1
]}

Wu, Chih-Hung ^{[2
]}

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli 320, Taiwan

[2] Inst Nucl Energy Res, Lungtan 32500, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 06期

关键词：

rapid thermal annealing; InGaP; solar cells; photoluminescence;

D O I：

10.1143/JJAP.47.4499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the CW and time-resolved photoluminescence (PL), and spectral response of three-junction InGaP/InGaAs/Ge solar cells following rapid thermal annealing (RTA). The improvement of material quality in the InGal? active layer after RTA is evident from the PL and spectral response. If the annealing temperature is 300 degrees C, the 10 K PL intensity is maximum, which increases by about a factor of 30 compared with that of the untreated sample. We suggest that the removal of the phosphorusvacancy-related complexes is responsible for improvement of the material quality after RTA. The photocurrent of the cell also increases following RTA if the incident photon energy is greater than similar to 1.8 eV.

引用

页码：4499 / 4501

页数：3

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