Novel hydrazone based polymers as hole transporting materials

被引：27

作者：

Getautis, V

Grazulevicius, JV

Daskeviciene, A

Malinauskas, T

Jankunaite, D

Gaidelis, V

Jankauskas, V

Sidaravicius, J

Tokarski, Z

机构：

[1] Kaunas Univ Technol, Fac Chem Technol, Dept Organ Chem, LT-50270 Kaunas, Lithuania

[2] Vilnius Univ, Dept Solid State Elect, LT-10222 Vilnius, Lithuania

[3] Vilnius Gediminas Tech Univ, Dept Polygraph Machines, LT-10223 Vilnius, Lithuania

[4] Samsung Informat Syst Amer, Digital Planning Solut Lab, Woodbury, MN 55125 USA

来源：

POLYMER | 2005年 / 46卷 / 19期

关键词：

polymers; polyaddition; hydrazones;

D O I：

10.1016/j.polymer.2005.06.085

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

The novel family of hole transporting polymers containing hydrazone moieties is reported. The polymers were prepared in polyaddition reaction of hydrazone-containing diepoxydes with 4,4'-thiobisbenzenethiol in the presence of catalyst triethylamine (TEA). Obtained polymers were found to constitute novel polymeric hole transporting materials (TM) characterized by differential scanning calorimetry and time of flight method. The highest hole drift mobility in the newly synthesized polymers exceed 10(-4) cm(2) V-1 s(-1) at an electric field of 10(6) V cm(-1) was observed in the TM with triphenylamine moieties. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：7918 / 7922

页数：5

共 10 条

[1]

[Anonymous], 1989, ELECTROPHOTOGRAPHY, DOI [DOI 10.11370/ISJEPJ.28.364, 10.11370/isjepj.28.364.]

[2]

Archie Y., 1987, INT J ELECTRON, V62, P625

[3]

Borsenberger PM, 1993, ORGANIC PHOTORECEPTO, P447

[4]

Daskeviciene M, 2002, J IMAGING SCI TECHN, V46, P467

[5]

Getautis V, 2004, J IMAGING SCI TECHN, V48, P265

[6]

Montrimas E., 1966, LITH J PHYS, V6, P569

[7]

MORT J, 1982, ELECT PROPERTIES POL

[8] Organic materials for electronic and optoelectronic devices [J].

Shirota, Y .

JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (01) :1-25

[9]

Tokarski Z, 2003, IS&T'S NIP19: INTERNATIONAL CONFERENCE ON DIGITAL PRINTING TECHNOLOGIES, P702

[10] XEROGRAPHIC TIME OF FLIGHT EXPERIMENT FOR THE DETERMINATION OF DRIFT MOBILITY IN HIGH-RESISTIVITY SEMICONDUCTORS [J].

VAEZINEJAD, SM .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1987, 62 (03) :361-384

← 1 →