The effect of inserting thin Co2MnAl layer into the Co2MnSi/MgO interface on tunnel magnetoresistance effect

被引：9

作者：

Ozawa, E. ^{[1
]}

Tsunegi, S. ^{[1
]}

Oogane, M. ^{[1
]}

Naganuma, H. ^{[1
]}

Ando, Y. ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

2ND INTERNATIONAL SYMPOSIUM ON ADVANCED MAGNETIC MATERIALS AND APPLICATIONS (ISAMMA 2010) | 2011年 / 266卷

关键词：

D O I：

10.1088/1742-6596/266/1/012104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated an epitaxially grown B2-ordered Co2MnAl Heusler alloy film by optimizing fabrication conditions, such as composition of the films and annealing temperature. Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/Co2MnAl(0-1.0 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin Co2MnAl layer at the Co2MnSi/MgO interface. The MTJ with Co2MnAl thickness of 0.5 nm exhibited the highest TMR ratio at 310 K and 10 K.

引用

页数：4

共 11 条

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