Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy

被引：10

作者：

Zhang, Zexuan ^{[1
]}

Cho, Yongjin ^{[1
]}

Gong, Mingli ^{[2
]}

Ho, Shao-Ting ^{[2
]}

Singhal, Jashan ^{[1
]}

Encomendero, Jimy ^{[1
]}

Li, Xiang ^{[1
]}

Lee, Hyunjea ^{[1
]}

Xing, Huili Grace ^{[1
,2
,3
]}

Jena, Debdeep ^{[1
,2
,3
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2022年 / 58卷 / 02期

关键词：

Ferrimagnet; gallium nitride; Hall effect; manganese nitride; molecular beam epitaxy (MBE); wide bandgap semiconductor;

D O I：

10.1109/TMAG.2021.3085853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window, significantly improved ferrimagnetic Mn4N layers are successfully grown on GaN with similar to 1 nm surface roughness. Distinct from earlier reports, the Mn4N layers grown on GaN are found to be [001] oriented with 12-fold in-plane symmetry in the diffraction pattern. This unique epitaxial registry originates from three equivalent rotational domains. The ferrimagnetic magnetotransport properties of low growth temperature Mn4N layers on GaN are comparable to those reported on cubic substrates such as MgO. However, a sign-flip of the Hall resistance is discovered for Mn4N layers grown above 300 degrees C.

引用

页数：6

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