Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode

被引：0

作者：

Cervera, C. ^{[1
]}

Taalat, R. ^{[1
]}

Christol, P. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Jaworowicz, K. ^{[2
]}

Ribet-Mohamed, I. ^{[2
]}

Konczewicz, L. ^{[3
]}

Contreras, S. ^{[3
]}

机构：

[1] Univ Montpellier 2, UMR CNRS 5214, Inst Elect Sud, Pl Eugene Bataillon, F-34095 Montpellier 5, France

[2] Off Natl Etud & Rech Aerosp, F-91761 Palaiseau, France

[3] Univ Montpellier 2, CNRS, Lab Charles Coulomb, UMR 5221, F-34095 Montpellier, France

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXXVII | 2011年 / 8012卷

关键词：

InAs/GaSb Superlattice; Infrared Photodiode; dark current measurement; asymmetric design;

D O I：

10.1117/12.882133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Symmetric and asymmetric mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiode were fabricated by Molecular Beam Epitaxy (MBE) on p-type GaSb substrate and characterized as a function of temperature. The symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs and exhibits at 80K a cut-off wavelength (lambda c) of 4.5 mu m, while the asymmetric SL design was composed of 7.5 InAs MLs and 3.5 GaSb MLs for lambda c = 5.5 mu m at 80K. Optical characterizations made of photoluminescence as a function of temperature and room temperature absorption spectra were performed on these two kinds of structures. Several electrical characterizations including dark current and capacitance-voltage measurements were also carried out on single detectors in the temperature range [77K-300K]. Results obtained were compared and analyzed in order to define optimized SL structure design for the high performance in the MWIR domain.

引用

页数：10

共 24 条

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