Ultrathin GaAs Solar Cells With a Silver Back Mirror

被引：68

作者：

Vandamme, Nicolas ^{[1
]}

Chen, Hung-Ling ^{[1
]}

Gaucher, Alexandre ^{[1
]}

Behaghel, Benoit ^{[1
]}

Lemaitre, Aristide ^{[1
]}

Cattoni, Andrea ^{[1
]}

Dupuis, Christophe ^{[1
]}

Bardou, Nathalie ^{[1
]}

Guillemoles, Jean-Francois ^{[2
,3
]}

Collin, Stephane ^{[1
]}

机构：

[1] CNRS, Lab Photon Nanostruct, F-91460 Marcoussis, France

[2] IRDEP CNRS EDF Chim ParisTech, Inst Rech & Dev Energie Photovolta, F-78400 Chatou, France

[3] Univ Tokyo, CNRS RCAST, LIA NextPV, Tokyo 1538904, Japan

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 02期

关键词：

GaAs; light-trapping; thin film;

D O I：

10.1109/JPHOTOV.2014.2371236

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on the fabrication and characterization of ultrathin GaAs solar cells with a silver back mirror and absorber thicknesses of only t = 120 nm and t = 220 nm. The silver back mirror is combined with localized ohmic contacts. Without antireflection coating, Fabry-Perot resonances lead to strong enhancement over single-pass absorption (up to 4), and external quantum efficiency reaches 0.8 at resonance wavelengths. An analytical model is used to determine the resonance wavelengths and the absorption maxima. Ashort-circuit improvement of 27% results from the enhanced absorption induced by the Fabry-Perot resonances. By implementing an additional antireflection coating, short-circuit currents reach 16.3 mA/cm(2) for t = 120 nm and 20.7 mA/cm(2) for t = 220 nm, corresponding to efficiencies of 8.7 % and 12.9 %, respectively.

引用

页码：565 / 570

页数：6

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