Passively mode-locking Nd:Gd0.5Y0.5VO4 laser with an In0.25Ga0.75Aa absorber grown at low temperature

被引：20
作者：
Wang, YG [1 ]
Ma, XY
Fan, YX
Wang, HT
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 2100933, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 2100933, Peoples R China
来源：
APPLIED OPTICS | 2005年 / 44卷 / 20期
关键词：
D O I：
10.1364/AO.44.004384
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.
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收藏
页码：4384 / 4387
页数：4
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