Double Avalanche Injection in Diode Avalanche Sharpeners

被引：1
作者：
Ivanov, M. S. [1 ]
Podolska, N. I. [1 ]
Rodin, P. B. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2020年 / 54卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
impact ionization; subnanosecond switches; avalanche injection; current instabilities; DOPING CONCENTRATION; SWITCHING PROCESSES; CURRENT FILAMENTS; SILICON DIODES; PSN RECTIFIERS;
D O I：
10.1134/S1063782620030100
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Picosecond-range avalanche sharpening diodes commutating fast-rising high-voltage pulses of submicrosecond duration are simulated numerically. It is demonstrated that the maximum duration of the commutated pulse are limited by physical phenomena related to the transition of the diode to the double-avalanche-injection mode instead of the drift extraction of nonequilibrium electron-hole plasma. Double avalanche injection is in principle capable of supporting the diode structure in the conducting state after switching. However, the negative differential conductivity, which is attributed to the double injection mode, causes the transverse instability of uniform current distribution and isothermal current filamentation.
引用
收藏
页码：345 / 349
页数：5
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