Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot

被引：25

作者：

Xia, Congxin ^{[1
]}

Liu, Yaming ^{[2
]}

Wei, Shuyi ^{[1
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

[2] Henan Inst Sci & Technol, Sch Mech & Elect, Xinxiang 453007, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 11期

关键词：

quantum dot; hydrogenic impurity; hydrostatic pressure;

D O I：

10.1016/j.apsusc.2007.11.036

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Within the framework of effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of a hydrogenic impurity in InAs/GaAs self-assembled quantum dot(QD) are investigated by means of a variational method. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD size. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy for small QD. Realistic cases, including the impurity in the QD and the surrounding barrier, are considered. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：3479 / 3483

页数：5

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