Efficient ion-slicing of InP thin film for Si-based hetero-integration

被引：36

作者：

Lin, Jiajie ^{[1
,2
]}

You, Tiangui ^{[1
]}

Wang, Mao ^{[3
]}

Huang, Kai ^{[1
]}

Zhang, Shibin ^{[1
,2
]}

Jia, Qi ^{[1
]}

Zhou, Min ^{[1
]}

Yu, Wenjie ^{[1
]}

Zhou, Shengqiang ^{[3
]}

Wang, Xi ^{[1
]}

Ou, Xin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

来源：

NANOTECHNOLOGY | 2018年 / 29卷 / 50期

基金：

中国国家自然科学基金;

关键词：

InP-on-Si; hetero-integration; ion-slicing; wafer bonding; HELIUM IMPLANTATION; HYDROGEN; SILICON; EXFOLIATION; GROWTH; PLATELETS;

D O I：

10.1088/1361-6528/aae281

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Integration of high quality single crystalline InP thin film on Si substrate has potential applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of a 634 nm crystalline InP layer from the bulk substrate was achieved by sequential implantation of He ions and H ions at room temperature. It was found that the sequence of He and H ion implantations has a decisive influence on the InP surface blistering and exfoliation, which only occur in the InP pre-implanted with He ions. The exfoliation efficiency first increases and then decreases as a function of H ion implantation fluence. A kinetics analysis of the thermally activated blistering process suggests that the sequential implantation of He and H ions can reduce the InP thin film splitting thermal budget dramatically. Finally, a high quality 2 inch InP-on-Si (100) hetero-integration wafer was fabricated by He and H ion sequential implantation at room temperature in combination with direct wafer bonding.

引用

页数：7

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