共 8 条
- [1] IDENTIFICATION OF VACANCY DEFECTS IN COMPOUND SEMICONDUCTORS BY CORE-ELECTRON ANNIHILATION - APPLICATION TO INP [J]. PHYSICAL REVIEW B, 1995, 51 (07): : 4176 - 4185
- [4] VACANCIES STUDIED BY POSITRON-ANNIHILATION WITH HIGH-MOMENTUM CORE ELECTRONS [J]. PHYSICAL REVIEW B, 1979, 20 (09): : 3566 - 3572
- [5] DEFECT SPECTROSCOPY WITH POSITRONS - A GENERAL CALCULATIONAL METHOD [J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1983, 13 (02): : 333 - 346
- [6] THEORY OF POSITRONS IN SOLIDS AND ON SOLID-SURFACES [J]. REVIEWS OF MODERN PHYSICS, 1994, 66 (03) : 841 - 897
- [8] SZPALA S, IN PRESS PHYS REV B