Mechanisms Leading to Nonlinear Electrical Response of a Nano p-SiC/Silicone Rubber Composite

被引：95

作者：

Wang, X. ^{[1
]}

Nelson, J. K. ^{[1
]}

Schadler, L. S. ^{[1
]}

Hillborg, H. ^{[2
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

[2] ABB Corp Res, Vasteras, Sweden

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2010年 / 17卷 / 06期

基金：

美国国家科学基金会;

关键词：

Nonlinear electrical; mechanism; high field; hole hopping transport; nearest-neighbor; thin rubbery layer; field grading; nanocomposite; CHARGE INJECTION; DENSITY POLYETHYLENE; HOPPING CONDUCTION; TRANSPORT; PERCOLATION; ABSORPTION; DEPENDENCE; POLYMERS; CURRENTS;

D O I：

10.1109/TDEI.2010.5658218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well known that hopping of charge carriers via spatially and energetically distributed localized states is a primary transport mechanism in many disordered semiconductors and polymeric dielectrics. In this contribution, the nonlinear I-V physics of a 25vol% 50nm p-SiC/silicone rubber composite for high voltage field grading application was investigated, and a composite bulk hopping mechanism proposed. It is hypothesized that nearest-neighbor hole hopping occurs through thin rubbery layers between the SiC particles, and is the mechanism governing the nonlinear electric response of SiC/silicone rubber nanocomposites.

引用

页码：1687 / 1696

页数：10

共 57 条

[1] Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors [J].