Mechanisms Leading to Nonlinear Electrical Response of a Nano p-SiC/Silicone Rubber Composite

被引：93
作者：
Wang, X. [1 ]
Nelson, J. K. [1 ]
Schadler, L. S. [1 ]
Hillborg, H. [2 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
[2] ABB Corp Res, Vasteras, Sweden
来源：
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2010年 / 17卷 / 06期
基金：
美国国家科学基金会;
关键词：
Nonlinear electrical; mechanism; high field; hole hopping transport; nearest-neighbor; thin rubbery layer; field grading; nanocomposite; CHARGE INJECTION; DENSITY POLYETHYLENE; HOPPING CONDUCTION; TRANSPORT; PERCOLATION; ABSORPTION; DEPENDENCE; POLYMERS; CURRENTS;
D O I：
10.1109/TDEI.2010.5658218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is well known that hopping of charge carriers via spatially and energetically distributed localized states is a primary transport mechanism in many disordered semiconductors and polymeric dielectrics. In this contribution, the nonlinear I-V physics of a 25vol% 50nm p-SiC/silicone rubber composite for high voltage field grading application was investigated, and a composite bulk hopping mechanism proposed. It is hypothesized that nearest-neighbor hole hopping occurs through thin rubbery layers between the SiC particles, and is the mechanism governing the nonlinear electric response of SiC/silicone rubber nanocomposites.
引用
收藏
页码：1687 / 1696
页数：10
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