Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs

被引：83
作者：
Sacconi, F [1 ]
Di Carlo, A
Lugli, P
Morkoç, H
机构：
[1] Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
[3] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[4] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 03期
基金：
美国国家科学基金会;
关键词：
gallium compounds; piezoelectric semiconductors; quantization; semiconductor device modeling; semiconductor heterojunctions;
D O I：
10.1109/16.906435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the calculation of electrical characteristics of AlGaN/GaN heterojunction field effect transistors (HFETs), The model is based on the self-consistent solution of the Schrodinger and Poisson equations coupled to a quasi-2-D model for the current flow. Both single and double heterojunction devices are analyzed for [0001] or [000-1] growth directions, The onset of a parasitic p-channel for particular growth directions and alloy concentrations is also shown.
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收藏
页码：450 / 457
页数：8
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