Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates

被引：11

作者：

Mitani, Takeshi ^{[1
]}

Eto, Kazuma ^{[1
]}

Momose, Kenji ^{[2
]}

Kato, Tomohisa ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

[2] Showa Denko Co Ltd, Minato Ku, Tokyo 1058518, Japan

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 08期

关键词：

SURFACE-MORPHOLOGY; SUBLIMATION GROWTH; SINGLE-CRYSTALS; GENERATION; DEFECTS;

D O I：

10.35848/1882-0786/ac15c1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Propagation of threading screw dislocations (TSDs) during hybrid growth, combined with TSD conversion by solution growth and bulk growth by physical vapor transport, has been investigated for 4 degrees off and 15 degrees off (000 (1) over bar) C-face seeds. The converted defects on basal planes (BP-defects) are able to be eliminated by continuing to guide them on basal planes with a 15 degrees off seed, while BP-defects revert to TSDs with a 4 degrees off seed. The difference in the BP-defects propagation is discussed based on the elastic energy balance between TSDs and BP-defects in the unit growth thickness for higher off-angle seeds. (C) 2021 The Japan Society of Applied Physics

引用

页数：4